GaN-based green laser diodes

@article{Jiang2016GaNbasedGL,
  title={GaN-based green laser diodes},
  author={Lingrong 灵荣 Jiang 江 and Jian-Ping 建平 Liu 刘 and Aiqin 爱琴 Tian 田 and Yang 洋 Cheng 程 and Zengcheng 增成 Li 李 and Li-Qun 立群 Zhang 张 and Shuming 书明 Zhang 张 and De-Yao 德尧 Li 李 and M. Ikeda and Huijing 会静 Yang 杨},
  journal={Journal of Semiconductors},
  year={2016},
  volume={37}
}
Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done. 
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67 Citations
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67 Citations

Design and growth of GaN-based blue and green laser diodes

GaN-based laser diodes (LDs) extend the wavelength of semiconductor LDs into the visible and ultraviolet spectrum ranges, and are therefore expected to be widely used in quantum technology, bio &…

High-power hybrid GaN-based green laser diodes with ITO cladding layer

Green laser diodes (LDs) still perform worst among the visible and near-infrared spectrum range, which is called the “green gap.” Poor performance of green LDs is mainly related to the p-type AlGaN…

Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template

Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer was 26.6%, and the…

Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide

Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement…

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.

A new LD structure using a thin thickness of the LB layer to reduce the effect of polarization shows a low threshold current and a high output power even when the In content of barrier layers is as large as 7%.

Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

Abstract The effect of V-pits in the upper waveguide (UWG) on device performance of GaN-based laser diodes (LDs) has been studied. Experimental results demonstrate that in comparison with the LDs…

Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Rapid degradation of InGaN/GaN green laser diodes

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